BCV62 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP general purpose double transistor

SSMMDD TTyyppee
■ Features
● High current gain
● Low collector-emitter saturation voltage
2
1
TR1
TR2
3
4
TranDsioisdtoerss
Product specification
BCV62
Unit: mm
1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Thermal resistance from junction to ambient
Operating and Storage and Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
Tj, TSTG
Rating
-30
-30
-6
-100
250
500
-55 to +150
Unit
V
V
V
mA
mW
℃/W
℃
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