BCV61 Datasheet, PDF (2/3 Pages) NXP Semiconductors – NPN general purpose double transistor

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Product specification
BCV61
■ Electrical Characteristics Ta = 25℃
Parameter
Transistor TR1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cutoff current
Emitter cutoff current
DC current gain
collector-emitter saturation voltage *
base-emitter saturation voltage *
Collector capacitance
Transition frequency
Noise figure
Transistor TR2
Base-emitter forward voltage
DC current gain
BCV61A
BCV61B
BCV61C
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC = 10 μA, IE = 0
30
V
V(BR)CEO IC = 10 mA, IB = 0
30
V
V(BR)EBO IC = 10 μA, IC = 0
6
V
ICBO VCB=30V, IE=0
15 nA
IEBO VEB=5V, IC=0
100 nA
VCE=5V, IC= 100μA
hFE
VCE=5V, IC= 2mA
100
110
800
IC = 10 mA; IB = 0.5 mA
VCE(sat)
IC = 100 mA; IB = 5 mA
0.25 V
0.6 V
IC = 10 mA; IB = 0.5 mA
VBE(sat)
IC = 100 mA; IB = 5 mA
0.7
V
0.9
V
Cc _{IE = ie = 0; VCB = 10 V; f = 1 MHz}
2.5
pF
fT
IC = 20 mA; VCE = 20 V; f = 100 MHz
100
IC =200 ^μA; VCE =5 V; RS =2k Ω ; f = 1 kHz;
F
B = 200 Hz
MHz
10 dB
VEBS
VCB = 0; IE = -250 mA
VCB = 0; IE = -10μA
hFE IC = 2 mA; VCE = 5 V
-400
110
200
420
-1.8 V
mV
220
450
800
* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
■ Marking
TYPE
Marking
BCV61
1MP
BCV61A
1JP
BCV61B
1KP
BCV61C
1LP
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