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BCV61 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN general purpose double transistor | |||
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SMD Type
â Features
â High current gain
â Low collector-emitter saturation voltage
2
1
TR1
TR2
3
4
Transistors
Product specification
BCV61
Unit: mm
1
â Absolute Maximum Ratings Ta = 25â
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Thermal resistance from junction to ambient
Operating and Storage and Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
Tj, TSTG
Rating
30
30
6
100
250
500
-55 to +150
Unit
V
V
V
mA
mW
â/W
â
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4008-318-123
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