BCP54 Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN medium power transistors

SMD Type
TransistIoCrs
Product specification
BCP54; BCP55; BCP56
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min Typ Max Unit
collector cut-off current
ICBO
IE = 0 A; VCB = 30 V
IE = 0 A; VCB = 30 V; Tj = 150
100 nA
10 ìA
emitter cut-off current
IEBO IC = 0 A; VEB = 5 V
100 nA
IC = 5 mA; VCE = 2 V
63
DC current gain
hFE IC =150 mA; VCE = 2 V
63
250
IC = 500 mA; VCE = 2 V
40
DC current gain
BCP54-10; BCP55-10; BCP56-10 hFE VCE = 2 V; IC = 150 mA
63
160
BCP54-16; BCP55-16; BCP56-16
100
250
collector-emitter saturation voltage
VCEsat IC = 0.5 A; IB = 50 mA
500 mV
base-emitter voltage
VBE IC = 0.5 A; VCE = 2 V
1
V
transition frequency
fT
IC = 10 mA; VCE = 5 V; f = 100 MHz
130
MHz
DC current gain ratio of the complementary pairs
|IC| = 150 mA;|VCE| = 2 V
1.6
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