BCP54 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN medium power transistors

SMD Type
TransistIoCrs
Product specification
BCP54; BCP55; BCP56
Features
High collector current
1.3 W power dissipation.
SOT-223
6.50+0.2
-0.2
3.00+0.1
-0.1
4
Unit: mm
3.50^+0.2
-0.2
0.90+0.2
-0.2
7.00+0.3
-0.3
Absolute Maximum Ratings Ta = 25
Parameter
collector-base voltage
BCP54
BCP55
BCP56
collector-emitter voltage
BCP54
BCP55
BCP56
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
Rth j-a
Rth j-s
1
2
3
2.9
4.6
0.70+0.1
-0.1
Rating
Unit
45
V
60
V
100
V
45
V
60
V
80
V
5
V
1
A
1.5
A
0.2
A
1.33
W
-65 to +150
150
-65 to +150
94
K/W
13
K/W
1 base
2 collector
3 emitter
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