BAS56 Datasheet, PDF (2/2 Pages) NXP Semiconductors – High-speed double diode

Product specification
BAS56
Electrical Characteristics Ta = 25
Parameter
forward voltage
reverse current
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
Symbol
Test Condition
Min
Max
Unit
VF
IF = 200 mA; DC value;
1.0
mV
VR = 60 V
IR
VR =60 V;Tj = 150
100
nA
100
A
series connection
IR
VR = 120 V
100
nA
VR =120 V;Tj = 150
100
A
Cd
f = 1 MHz; VR = 0
2.5
pF
when switched from IF = 400 mA to,IR = 400 mA;
trr
RL = 100 ; measured at IR = 40 mA
6
ns
when switched from IF = 400 mA;tr = 30 ns;
Vfr
when switched from IF = 400 mA;tr = 100 ns;
2.0
V
1.5
V
Marking
Marking
L51
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