BAS56 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

Product specification
BAS56
Features
Small plastic SMD package
High switching speed: max. 6 ns
Continuous reverse voltage:max. 60 V
Repetitive peak reverse voltage:max. 60 V
Repetitive peak forward current:max. 600 mA.
Unit: mm
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Test Condition
Min
repetitive peak reverse voltage
VRRM
series connection
continuous reverse voltage
VR
series connection
continuous forward current
single diode loaded;
IF
double diode loaded;
repetitive peak forward current
single diode loaded
IFRM
double diode loaded
square wave; Tj = 25 prior to surge
non-repetitive peak forward current
IFSM
t=1 s
t = 100 s
t = 10 ms
total power dissipation
Ptot
Tamb = 25
storage temperature
Tstg
-65
junction temperature
Tj
thermal resistance from junction to tie-point
Rth j-tp
thermal resistance from junction to ambient
Rth j-a
Max
Unit
60
V
120
60
V
120
200
mA
150
600
mA
430
9
A
3
1.7
250
mW
+150
150
360
K/W
500
K/W
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