BAS55 Datasheet, PDF (2/2 Pages) NXP Semiconductors – High-speed diode

Product specification
BAS55
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Max
Unit
Forward voltage
VF
IF = 200 mA;DC value; Note 1
1.0
V
Reverse current
VR = 60 V;
IR
VR = 60 V; Tj = 150
100
nA
100
A
Diode capacitance
Cd
f = 1 MHz; VR = 0;
2.5
pF
Reverse recovery time
when switched from IF = 400 mA to IR = 400 mA;
trr
6
ns
RL = 100 ;measured at IR = 40 mA;
Forward recovery voltage
when switched to IF = 400 mA;tr = 30 ns;
2
Vf r
V
when switched to IF = 400 mA;tr = 100 ns;
1.5
Note
1. Tamb = 25 ; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
Marking
Marking
L5p
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