BAS55 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

Product specification
BAS55
Features
Small plastic SMD package
High switching speed: max. 6ns
Continuous reverse voltage: max. 60 V
Repetitive peak forward current: max. 600 mA.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Conditions
Min
Repetitive peak reverse voltage
VRRM
Continuous reverse voltage
VR
Continuous forward current
IF
Note 1
Repetitive peak forward current
IFRM
square wave; Tj =25 prior to surge;
Non-repetitive peak forward current
IFSM
t=1 s
t = 100 s
t = 100 ms
Total power dissipation
Ptot
Tmab = 25 ; Note 1
Storage temperature
Tstg
-65
Junction temperature
Tj
Note
1. Device mounted on an FR4 printed-circuit board.
Max
Unit
60
V
60
V
250
mA
600
mA
9
A
3
1.7
250
mW
+150
150
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2