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| 3DD13002B Datasheet, PDF (2/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN) | |||
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300
COMMON
EMITTER
250
T =25â
a
Static Characteristic
10mA
9mA
200
8mA
150
100
50
0
0
7mA
6mA
5mA
4mA
3mA
2mA
I =1mA
B
2
4
6
8
10
12
14
COLLECTOR-EMITTER VOLTAGE V (V)
CE
1000
β=5
VBEsat ââ IC
800
T =25â
a
600
T =100 â
a
400
200
0
0.1
1
10
100
800
COLLECTOR CURREMT I (mA)
C
IC ââ VBE
800
COMMON EMITTER
V =10V
CE
100
10
1
0.1
0
1000
100
200
400
600
800
1000
BASE-EMMITER VOLTAGE V (mV)
BE
1200
Cob/Cib ââ VCB/VEB
C
ib
f=1MHz
I =0/I =0
E
C
T =25 â
a
C
ob
10
3DD13002B
Product specification
100
hFE ââ IC
COMMON EMITTER
V = 10V
CE
T =100â
a
T =25â
a
10
1
1
10
100
800
COLLECTOR CURRENT I (mA)
C
1000
β=5
VCEsat ââ
IC
T =100 â
a
100
T =25â
a
10
0.5
1
10
100
800
COLLECTOR CURREMT I (mA)
C
10
fT ââ IC
COMMON EMITTER
V =10V
CE
8
T =25â
a
6
4
2
0
20
1200
40
60
80
100
120
COLLECTOR CURRENT I (mA)
C
PC ââ Ta
900
600
300
1
0
0.1
1
10
30
0
REVERSE VOLTAGE V (V)
http://www.twtysemi.com
sales@twtysemi.com
25
50
75
100
125
AMBIENT TEMPERATURE T (â)
a
4008-318-123
150
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