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| 3DD13002B Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN) | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
3DD13002B TRANSISTORï¼NPNï¼
TO-92
FEATURE
Power Switching Applications
1.EMITTER
2. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
3. BASE
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
0.8
A
PC
Collector Power Dissipation
0.9
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55~150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
600
Collector-emitter breakdown voltage V(BR)CEO
IC=1mA,IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA,IC=0
6
Collector cut-off current
ICBO
VCB= 600V,IE=0
ICEO
VC(= 400V,IB=0
Emitter cut-off current
IEBO
VEB= 6 V, IC=0
Dc c urrent gain
hFE1
VCE= 10 V, IC=200mA
9
hFE2
VCE= 10 V, IC=0.25mA
5
Collector-emitter saturation voltage
VCE(sat)
IC=200mA, IB=40mA
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
CLASSIFICATION OF hFE1
Range
9-15
VBE(sat)
IC=200mA, IB=40mA
VCE=10V, IC=100mA
fT
5
f =1MHz
tf
IC=1A, IB1=-IB2=0.2A
ts
VCC=100V
15-20
20-25
25-30
30-35
Max Unit
V
V
V
100
µA
100
µA
100
µA
40
0.5
V
1.1
V
MHz
0.5
µs
2.5
µs
35-40
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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