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2SB985 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – Large-Current Driving Applications
Static Characteristic
-120
COMMON EMITTER
Ta=25℃
-80
-0.60mA
-0.54mA
-0.48mA
-0.42mA
-0.36mA
-0.30mA
-40
-0.24mA
-0.18mA
-0.12mA
-0
-0.0
IB=-0.06mA
-0.5
-1.0
-1.5
-2.0
-2.5
COLLECTOR-EMITTER VOLTAGE VCE (V)
-400
β=20
V
CEsat
—— I
C
-100
Ta=100℃
Ta=25℃
-10
-1
-10
-100
COLLECTOR CURRENT IC (mA)
-3000
-1000
COMMON EMITTER
VCE=-2V
I
C
—— V
BE
-1000
-3000
Ta=100℃
-100
Ta=25℃
-10
2SB985
Product specification
h —— I
FE
C
1000
Ta=100℃
Ta=25℃
100
COMMON EMITTER
VCE=-2V
10
-1
-10
-100
COLLECTOR CURRENT IC (mA)
-1200
β=20
V
BEsat
—— I
C
-1000
-3000
-1000
-800
Ta=25℃
-600
Ta=100℃
-400
-200
-1
1000
100
-10
-100
COLLECTOR CURRENT IC (mA)
C / C —— V / V
ob ib
CB EB
Cib
-1000
-3000
f=1MHz
IE=0 / IC=0
Ta=25℃
Cob
-1
-200
1000
-400
-600
-800
-1000
BASE-EMMITER VOLTAGE VBE (mV)
f —— I
T
C
-1200
10
-0.1
1000
-1
REVERSE VOLTAGE V (V)
P —— T
C
a
-10
-20
800
600
100
400
COMMON EMITTER
VCE=-10V
Ta=2-850-℃80
10
-50
-60
-70
-80
COLLECTOR CURRENT IC (mA)
200
0
0
http://www.twtysemi.com
sales@twtysemi.com
25
50
75
100
125
AMBIENT TEMPERATURE Ta (℃)
4008-318-123
150
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