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| 2SB985 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Large-Current Driving Applications | |||
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Product specification
TO-92MOD Plastic-Encapsulate Transistors
2SB985 TRANSISTOR (PNP)
TO-92MOD
FEATURES
z Power Supplies, Relay Drivers, Lamp Drivers
z Adoption of FBET,MBIT Processes
z Low Saturation Voltage
z Large Current Capacity and Wide ASO
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-3
A
PC
Collector Power Dissipation
0.9
W
RθJA
Thermal Resistance Junction to Ambient
139
â/W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=-10μA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-10μA, IC=0
Collector cut-off current
ICBO
VCB=-40V, IE=0
Emitter cut-off current
IEBO
VEB=-4V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-2V, IC=-100mA
VCE=-2V, IC=-3A
Collector-emitter saturation voltage
VCE(sat) IC=-2A, IB=-100mA
Base-emitter saturation voltage
VBE(sat) IC=-2A, IB=-100mA
Transition frequency
fT
VCE=-10V, IC=-50mA
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
Rank
R
Range
100-200
VCB=-10V, IE=0, f=1MHz
S
140-280
-60
-50
-6
100
40
T
200-400
Typ Max Unit
V
V
V
-1
μA
-1
μA
560
-0.7 V
-1.2 V
150
MHz
39
pF
U
280-560
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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