2SA684 Datasheet, PDF (2/2 Pages) Unisonic Technologies – PNP EPITAXIAL PLANAR TRANSISTOR

-1300
-1200
-1000
-800
-600
Static Characteristic
COMMON EMITTER
T =25℃
a
-6.0mA
-5.4mA
-4.8mA
-4.2mA
-3.6muA
-3.0mA
-2.4mA
-1.8mA
-400
-1.2mA
-200
I =-0.6mA
B
-0
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
COLLECTOR-EMITTER VOLTAGE V (V)
CE
-1200
β=10
V —— I
BEsat
C
-900
2SA684
Product specification
1000
h ——
FE
I
C
800 ^{COMMON EMITTER}
V = -10V/-5V
CE
600
V = -10V
CE
400
T =100℃
a
T =25℃
a
200
V = -5V
CE
100
-1
-1000
β=10
-10
-100
COLLECTOR CURRENT I (mA)
C
V
—— I
CEsat
C
-1000
T =25℃
-600
a
T =100 ℃
a
-300
-0.4
-1
-10
-100
COLLECTOR CURREMT I (mA)
C
-1000
I —— V
C
BE
COMMON EMITTER
V =-10V
CE
-100
-10
-1000
-100
T =100 ℃
a
-10
-1
T =25℃
a
-10
-100
COLLECTOR CURREMT I (mA)
C
f —— I
T
C
500
COMMON EMITTER
VCE=-10V
T =25℃
a
100
-1000
-1
-0.1
-200
1000
f=1MHz
I =0/I =0
E
C
T =25 ℃
a
100
-400
-600
-800
BASE-EMMITER VOLTAGE V (mV)
BE
C /C —— V /V
ob ib
CB EB
C
ib
-1000
C
ob
10
10
-2.2
900
750
600
450
300
150
1
-0.5
-1
0
-10
-35
0
REVERSE VOLTAGE V (V)
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-10
-100
COLLECTOR CURRENT I (mA)
C
P —— T
C
a
25
50
75
100
125
AMBIENT TEMPERATURE T (℃)
a
4008-318-123
150
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