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| 2SA684 Datasheet, PDF (1/2 Pages) Unisonic Technologies – PNP EPITAXIAL PLANAR TRANSISTOR | |||
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Product specification
TO-92L Plastic-Encapsulate Transistors
2SA684 TRANSISTOR (PNP)
FEATURES
Automatic Insertion by Radial Taping Possible
Complementary Pair with 2SC1384
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS(Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-50
-5
-1
0.75
150
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=-10uA, IE=0
-60
Collector-emitter breakdown voltage
V(BR)CEO IC=-2mA, IB=0
-50
Emitter-base breakdown voltage
V(BR)EBO IE=-10μA, IC=0
-5
Collector cut-off current
ICBO
VCB=-20V, IE=0
DC current gain
hFE(1) VCE=-10V, IC=-500mA
85
hFE(2) VCE=-5V, IC=-1A
50
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB=-50mA
Base-emitter saturation voltage
VBE(sat) IC=-500mA, IB=-50mA
Transition frequency
fT
VCE=-10V, IE=50mA, f=200MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
Typ
-0.2
-0.85
200
20
Unit
V
V
V
A
W
â
â
Max Unit
V
V
V
-0.1 μA
340
-0.4
V
-1.2
V
MHz
30
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Q
85-170
R
120-240
S
170-340
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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