RB751V-40_10 Datasheet, PDF (3/3 Pages) Taiwan Semiconductor Company, Ltd – 200mW, Low VF SMD Schottky Barrier Diode

Small Signal Diode
Rating and Sharacteristic Curves
RB751V-40
200mW, Low VF SMD Schottky Barrier Diode
100
10
1
0.1
0.01
0
FIG 1 Typical Forward Characteristics
Ta=25^oC
0.2
0.4
0.6
0.8
1
VF Forward Voltage (V)
0.4
0.32
0.24
0.16
0.08
0
0
FIG 2 Forward Current Derating Curve
25
50
75
100
125
150
Terminal Temperature (°C)
FIG 3 Admissible Power Dissipation Curve
300
250
200
150
100
50
0
0
20
40
60
80
100
120
140
Ambient Tempeatature (^oC)
FIG 4 Typical Junction Capacitance
5
4
3
2
1
0
0
5
10
15
20
25
Reverse Voltage (V)
Version : B10