RB751V-40_10 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 200mW, Low VF SMD Schottky Barrier Diode

Small Signal Diode
RB751V-40
200mW, Low VF SMD Schottky Barrier Diode
SOD-323
Features
—Low power loss, high current capability, low VF
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case : SOD-323 small outline plastic package
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Polarity : Indicated by cathode band
—Weight :0.004 gram (approximately)
—Marking Code : 5
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min Max
1.20 1.40
2.50 2.80
0.25 0.35
1.60 1.80
0.80 0.90
0.08 0.15
0.475 REF
Unit (inch)
Min Max
0.047 0.055
0.098 0.106
0.010 0.014
0.063 0.071
0.031 0.035
0.003 0.006
0.19 REF
Pin Configuration
Ordering Information
Package
Part No.
SOD-323 RB751V-40 RR
SOD-323 RB751V-40 RRG
Packing
3K / 7" Reel
3K / 7" Reel
Marking
5
5
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Suggested PAD Layout
1.60
0.063
0.63
0.025
0.83
0.033
2.86
0.113
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Reverse Voltage
Mean Forward Current @ TL=100°C (Lead Temperature)
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient) (Note 2)
Junction and Storage Temperature Range
Symbol
PD
VRRM
VR
IO
IFSM
RθJA
TJ, TSTG
Value
200
40
30
30
0.2
500
-45~125
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
Units
mW
V
V
mA
A
°C/W
°C
Version : B10