RABS15M Datasheet, PDF (3/4 Pages) Taiwan Semiconductor Company, Ltd – 1.5A, 1000V Miniature Fast Recovery Glass Passivated Surface Bridge Rectifier

CREAT BY ART
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
10
RABS15M
Taiwan Semiconductor
1
T_J=125°C
0.1
0
T_J=25°C
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
FORWARD VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
ABS-L
DIM.
B
C
D
E
F
G
H
I
J
K
Unit (mm)
Min Max
4.30 4.50
6.25 6.65
0.60 0.70
3.90 4.10
4.90 5.10
1.25 1.35
1.20 1.30
0.05 0.15
0.30 0.70
0.15 0.25
Unit (inch)
Min Max
0.169 0.177
0.246 0.262
0.024 0.028
0.154 0.161
0.193 0.201
0.049 0.053
0.047 0.051
0.002 0.006
0.012 0.028
0.006 0.010
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N
YW
F
Document Number: DS_D1412015
Symbol
A
B
C
D
E
F
Unit (mm)
1.50
0.90
4.22
7.22
2.05
5.72
Unit (inch)
0.059
0.035
0.166
0.284
0.081
0.225
= Specific Device Code
= Date Code
= Factory Code
Version: C15