RABS15M Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 1.5A, 1000V Miniature Fast Recovery Glass Passivated Surface Bridge Rectifier

RABS15M
Taiwan Semiconductor
CREAT BY ART
1.5A, 1000V
Miniature Fast Recovery Glass Passivated Surface Bridge Rectifier
FEATURES
- Ideal for automated placement, for compact PCB design
- High surge current capability
- Ultrafast reverse recovery time for high frequency
- Negligible leakage current
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
ABS-L
4
1
4
1
MECHANICAL DATA
Case: Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Polarity as marked on the body
Weight: 0.09 g (approximately)
3
2
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
RABS15M
Maximum repetitive peak reverse voltage
V_RRM
1000
Maximum RMS voltage
V_RMS
700
Maximum DC blocking voltage
V_DC
1000
Maximum average forward rectified current
I_F(AV)
1.5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
50
Maximum instantaneous forward voltage (Note 1)
I_F= 1.5A
V_F
Maximum reverse current @ rated V_R
T_J=25°C
T_J=125°C
I_R
Maximum reverse recovery time per diode (Note 2)
t_rr
Rating for fusing (t<8.3ms)
I²t
Typical thermal resistance
R_θJL
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
1.30
1
200
500
10
26
70
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
ns
A²s
°C/W
°C
°C
Document Number: DS_D1412015
Version: C15