English
Language : 

TSM3443_14 Datasheet, PDF (2/6 Pages) Taiwan Semiconductor Company, Ltd – 20V P-Channel MOSFET
◁
TSM3443
20V P-Channel MOSFET
Electrical Specifications (TA=25oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching 3
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VGS = ±12V, VDS = 0V
VDS = -20V, VGS = 0V
VDS =-5V, VGS = -4.5V
VGS = -4.5V, ID = -4.7A
VGS = -2.5V, ID = -3.8A
VDS = -10V, ID = -4.7A
IS = -1.7A, VGS = 0V
VDS = -10V, ID = -4.7A,
VGS = -4.5V
VDS = -10V, VGS = 0V,
f = 1.0MHz
BVDSS
VGS(TH)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
-20
-0.5
--
--
-15
--
--
--
--
--
--
--
--
--
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
--
VDD = -10V, RL = 10Ω,
ID = -1A, VGEN = -4.5V,
RG = 6Ω
tr
td(off)
--
--
tf
--
Note 1: Pulse test: PW ≤300µS, duty cycle ≤2%
Note 2: For DESIGN AID ONLY, not subject to production testing.
Note 3: Switching time is essentially independent of operating temperature.
Typ Max Unit
--
--
V
--
-1.4
V
--
±100 nA
--
-1.0
µA
--
--
A
48
60
mΩ
80
100
11
--
S
-0.8 -1.2
V
6
9
1.4
--
nC
1.9
--
640
--
180
--
pF
90
--
22
35
35
55
ns
45
70
25
50
2/6
Version: E14
 ▷