TSM3443_14 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 20V P-Channel MOSFET

TSM3443
20V P-Channel MOSFET
SOT-26
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
PRODUCT SUMMARY
V_DS (V)
R_DSON (mΩ)
60 @ VGS = -4.5V
-20
100 @ VGS = -2.5V
I_D (A)
-4.7
-3.8
Features
● Advance Trench Process Technology
● High Density Cell Design fPor Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Block Diagram
Part No.
Package
Packing
TSM3443CX6 RF
TSM3443CX6 RFG
SOT-26
SOT-26
3Kpcs / 7” Reel
3Kpcs / 7” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Ratings (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current, V_GS @4.5V.
I_D
Pulsed Drain Current, V_GS @4.5V
I_DM
Continuous Source Current (Diode Conduction)^a,b
I_S
Maximum Power Dissipation
T_A=25^oC
T_A=70^oC
P_D
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
T_J, T_STG
Thermal Performance
Parameter
Symbol
Junction to Case Thermal Resistance
RÓ¨_JC
Junction to Ambient Thermal Resistance (PCB mounted)
Note 1: Pulse width limited by the Maximum junction temperature
RÓ¨_JA
Note 2: Surface Mounted on FR4 Board, t ≤ 5 sec
P-Channel MOSFET
Limit
-20
±12
-4.7
-20
-1.7
2
1.3
+150
- 55 to +150
Limit
30
80
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/6
Version: E14