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TSM10P06 Datasheet, PDF (2/4 Pages) Taiwan Semiconductor Company, Ltd – 60V P-Channel MOSFET
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TSM10P06
60V P-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
VGS = 0V, ID = 250uA
VDS = VGS, ID = 250µA
VGS = ±20V, VDS = 0V
VDS = -60V, VGS = 0V
VDS = -5V, VGS = -10V
VGS = -10V, ID = -5A
VGS = -4.5V, ID = -2A
VDS = -15V, ID = -3.5A
IS = -2.5A, VGS = 0V
BVDSS
VGS(TH)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS = -15V, ID = -3.5A,
Qgs
VGS = -10V
Qgd
Input Capacitance
Ciss
Output Capacitance
VDS = -30V, VGS = 0V,
Coss
f = 1.0MHz
Reverse Transfer Capacitance
Crss
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = -15V, RL = 15Ω,
ID = -1A, VGEN = -10V,
RG = 6Ω
td(on)
tr
td(off)
tf
Notes 1: Pulse test: PW ≤300µS, duty cycle ≤2%
Notes 2: L=0.1mH,
Notes 3: For DESIGN AID ONLY, not subject to production testing.
Notes 4: Switching time is essentially independent of operating temperature.
Min
-60
-1
--
--
-10
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
--
130
170
6
-1.25
6
1.7
1.5
540
60
30
7
9
19
4
Max
--
--
±100
-1
--
170
220
--
-1.5
--
--
--
--
--
--
--
--
--
--
Unit
V
V
nA
µA
A
mΩ
S
V
nC
pF
nS
2/4
Version: B13
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