TSM10P06 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 60V P-Channel MOSFET

TSM10P06
60V P-Channel MOSFET
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V_DS (V)
R_DSON (mΩ)
170 @ V_GS = -10V
-60
220 @ V_GS = -4.5V
I_D (A)
-5
-2
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No.
Package
Packing
TSM10P06CP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Block Diagram
P-Channel MOSFET
Absolute Maximum Rating (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a,b
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
Total Power Dissipation @ T_C=25C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
E_AS
I_AS
P_DTOT
T_J
T_J, T_STG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Symbol
RÓ¨_JC
RÓ¨_JA
Limit
-60
±20
-10
-20
-10
5
-10
37
+150
- 55 to +150
Limit
4
70
Unit
V
V
A
A
A
mJ
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/4
Version: B13