TSM085N03PQ33 Datasheet, PDF (2/5 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel Power MOSFET

TSM085N03PQ33
30V N-Channel Power MOSFET
Electrical Specifications (T_C = 25°C unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
V_GS = 0V, I_D = 250µA
V_GS = 10V, I_D = 16A
V_GS = 4.5V, I_D = 8A
V_DS = V_GS, I_D = 250µA
BV_DSS
30
--
--
V
--
6.2 8.5
R_DS(ON)
--
9
mΩ
13
V_GS(TH)
1.2 1.6 2.5
V
V_DS = 30V, V_GS = 0V
--
--
1
Zero Gate Voltage Drain Current
I_DSS
µA
V_DS = 24V, T_J = 125°C
--
--
10
Gate Body Leakage
Forward Transconductance ^{(Note 3)}
V_GS = ±20V, V_DS = 0V
V_DS = 10V, I_D = 8A
I_GSS
--
-- ±100 nA
gfs
--
9.5
--
S
Dynamic
Total Gate Charge ^{(Note 3,4)}
Gate-Source Charge ^{(Note 3,4)}
Gate-Drain Charge ^{(Note 3,4)}
V_DS = 15V, I_D = 20A,
V_GS = 4.5V
Q_g
--
7.5
--
Q_gs
--
1.3
--
nC
Q_gd
--
4.5
--
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_DS = 25V, V_GS = 0V,
f = 1.0MHz
C_iss
--
680
--
C_oss
--
150
--
pF
C_rss
--
70
--
Switching
Turn-On Delay Time ^{(Note 3,4)}
Turn-On Rise Time ^{(Note 3,4)}
Turn-Off Delay Time ^{(Note 3,4)}
Turn-Off Fall Time ^{(Note 3,4)}
V_DD = 15V, I_D = 15A,
V_GS = 10V, R_GEN =3.3Ω
t_d(on)
t_r
t_d(off)
t_f
Source-Drain Diode Ratings and Characteristic
--
4.8
--
--
12.5
--
ns
-- 27.6 --
--
8.2
--
Maximum Continuous Drain-Source
Diode Forward Current
Integral reverse diode in
I_S
Maximum Pulse Drain-Source Diode the MOSFET
Forward Current
I_SM
Diode-Source Forward Voltage
V_GS = 0V, I_S = 1A
V_SD
Note:
1. Pulse width limited by safe operating area
2. L = 0.1mH, I_AS = 30A, V_DD = 25V, R_G = 25Ω, Starting T_J = 25°C
3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
4. Switching time is essentially independent of operating temperature.
--
--
48
A
--
--
192
A
--
--
1
V
2/5
Version: A14