TSM085N03PQ33 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel Power MOSFET

TSM085N03PQ33
30V N-Channel Power MOSFET
PDFN33
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
Value
V_DS
30
V_GS = 10V
8.5
R_DS(on) (max) _{VGS = 4.5V}
13
Q_g
7.5
Unit
V
mΩ
nC
Ordering Information
Part No.
Package
Packing
TSM085N03PQ33 RGG PDFN33 5kpcs / 13” Reel
● Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Block Diagram
Absolute Maximum Ratings (T_C = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25°C
I_D
T_C = 100°C
Pulsed Drain Current ^{(Note 1)}
I_DM
Single Pulse Avalanche Energy ^{(Note 2)}
E_AS
Power Dissipation @ T_C = 25°C
P_D
Operating Junction Temperature
Storage Temperature Range
T_J
T_STG
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Ambient
Thermal Resistance - Junction to Case
R_Ó¨JA
R_Ó¨JC
N-Channel MOSFET
Limit
30
±20
48
30
192
45
35
150
-55 to +150
Limit
62
3.6
Unit
V
V
A
A
A
mJ
W
°C
°C
Unit
°C/W
°C/W
1/5
Version: A14