TSF10H100C Datasheet, PDF (2/3 Pages) Taiwan Semiconductor Company, Ltd – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

ORDERING INFORMATION
PART NO. PACKING CODE
GREEN COMPOUND
CODE
PACKAGE
TSH10H100C
C0
Suffix "G"
ITO-220AB
TSF10H100C
Taiwan Semiconductor
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N
TSF10H100C C0
TSF10H100C C0G
PART NO.
TSF10H100C
TSF10H100C
PACKING CODE
C0
C0
GREEN COMPOUND
CODE
G
DESCRIPTION
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T_A=25^oC unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
12
10
8
6
4
2
WITH HEATSINK
4in x 6in x 0.25in
Al-Plate
0
0
25
50
75
100
125
150
CASE TEMPERATURE (^oC)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
100
T_J=150^oC
10
T_J=125^oC
1
0.1
T_J=25^oC
T_J=100^oC
0.01
0
0.2
0.4
0.6
0.8
1
1.2
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL REVERSE CHARACTERISTICS
100
10
T_J=150^oC
1
0.1
0.01
T_J=125^oC
T_J=100^oC
0.001
T_J=25^oC
0.0001
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
FIG. 4 TYPICAL JUNCTION CAPACITANCE
1000
100
f=1.0MHz
V_sig=50mV_p-p
10
0.1
1
10
100
REVERSE VOLTAGE (V)
Document Number: DS_D1401020
Version: C14