TSF10H100C Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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TSF10H100C
Taiwan Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
- Patented Trench MOS Barrier Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs. max.
Weight: 1.7g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(T_A=25^oC unless otherwise noted)
PARAMETER
SYMBOL
TSF10H100C
Maximum repetitive peak reverse voltage
V_RRM
100
Maximum average forward rectified
current
per device
per diode
I_F(AV)
10
5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
120
Peak repetitive reverse surge current (Note 1)
Non-repetitive avalanche energy at L=60mH, per diode
Voltage rate of change (Rated V_R)
Isolation voltage from terminal to heatsink t = 1 min
Breakdown voltage ( I_R =1.0mA )
Instantaneous forward voltage
per diode ( Note2 )
I_F = 5A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance (Note 3)
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 100°C
Operating junction temperature range
Storage temperature range
Note 1: 2.0 μs Pulse width, f=1.0 kHz
Note 2: Pulse test with pulse width=300 μs, 1% duty cycle
Note 3: Mount on heatsink size of 4in x 6in x 0.25in Al-plate
I_RRM
E_AS
dV/dt
V_AC
V_BR
V_F
I_R
R_θJC
T_J
T_STG
MIN.
100
-
-
-
-
0.5
60
10000
1500
TYP.
-
-
-
-
-
4.3
- 55 to +150
- 55 to +150
MAX.
-
0.8
0.7
100
6
UNIT
V
A
A
A
mJ
V/μs
V
V
V
μA
mA
O_C/W
O_C
O_C
Document Number: DS_D1401020
Version: C14