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RB521S-30_14 Datasheet, PDF (2/5 Pages) Taiwan Semiconductor Company, Ltd – 200mW, Low VF SMD Schottky Barrier Diode
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Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
1.E+00
Fig. 1 Forward Characteristics
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
TA=125°C
TA=75°C
TA=25°C
TA=-25°C
1.E-06
0.0
0.1
0.2
0.3
0.4
0.5
0.6
VF, Forward Voltage (V)
Fig. 3 Total Capacitance
30
28
26
TA=25oC
24
f=1MHz
22
20
18
16
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 10
Reverse Voltage : VR (V)
RB521S-30
Taiwan Semiconductor
1.E-02
1.E-03
1.E-04
Fig. 2 Reverse Characteristics
TA=125°C
TA=75°C
1.E-05
1.E-06
TA=25°C
1.E-07
1.E-08
TA= -25°C
1.E-09
0
5
10
15
20
25
30
VR, Reverse Voltage (V)
Document Number: DS_S1411001
Version: B14
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