RB521S-30_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 200mW, Low VF SMD Schottky Barrier Diode

Small Signal Product
RB521S-30
Taiwan Semiconductor
200mW, Low V_F SMD Schottky Barrier Diode
FEATURES
- Low power loss, high current capability, low V_F
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOD-523F
MECHANICAL DATA
- Case: SOD-523F small outline plastic package
- Molding compound, UL flammability classification rating 94V-0
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 1.68 ± 0.5 mg
- Marking code: C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
P_D
Repetitive Peak Reverse Voltage
V_RRM
Reverse Voltage
V_R
Mean Forward Current @ T_L=100°C
I_O
Non-Repetitive Peak Forward Surge Current (Note 1)
I_FSM
Thermal Resistance (Junction to Ambient)
R_θJA
Junction and Storage Temperature Range
T_J ,T_STG
Note 1: Test condition: 8.3 ms single half sine-wave superimposed on rated load
200
30
30
200
1
500
-55 to +125
UNIT
mW
V
V
mA
A
°C/W
o_C
PARAMETER
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
SYMBOL
V_(BR)
V_F
I_R
MIN
30
-
-
TYP
-
-
-
MAX
-
0.5
30
TEST CONDITION
I_R = 500 μA
I_F = 200 mA
V_R = 10 V
UNIT
V
V
μA
Document Number: DS_S1411001
Version: B14