MMBT2222A Datasheet, PDF (2/3 Pages) NXP Semiconductors – NPN switching transistor

Small Signal Transistor
MMBT2222A
300mW, NPN Small Signal Transistor
Electrical Characteristics
Type Number
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Output capacitance
Input capacitance
V_CE= 20V
V_CB= 10V
V_EB= 0.5V
I_C= 10μA I_E= 0
I_C= 10mA I_B= 0
I_E= 10μA I_C= 0
V_CB= 60V I_E= 0
V_CE= 60V V_BE(off)= 3.0V
V_EB= 3.0V I_C= 0
V_CE= 10V I_C= 500mA
V_CE= 10V I_C= 150mA
V_CE= 10V I_C= 10mA
V_CE= 10V I_C= 1mA
V_CE= 10V I_C= 0.1mA
I_C= 500mA I_B= 50mA
I_C= 500mA I_B= 50mA
I_C= 20mA f= 100MHz
I_E = 0
f= 1.0MHz
I_C = 0
f= 1.0MHz
Delay time
V_CC=30V V_BE(off)=-0.5V I_C=150mA I_B1=15mA
Rise time
V_CC=30V V_BE(off)=-0.5V I_C=150mA I_B1=15mA
Storage time
V_CC=30V I_C=150mA I_B1=-I_B2=15mA
Fall time
V_CC=30V I_C=150mA I_B1=-I_B2=15mA
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEX
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_obo
C_ibo
t_d
t_r
t_s
t_f
Tape & Reel specification
Min
Max
75
-
40
-
6
-
-
0.01
-
0.01
-
0.01
40
-
100
300
75
-
50
-
35
-
-
1.0
-
2.0
300
-
8
25
-
10
-
25
-
225
-
60
Units
V
V
V
μA
μA
μA
V
V
MHz
pF
pF
nS
nS
nS
nS
TSC label
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
P0
d
P1
T
A
C
B
E
F
W
W1
Item
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
Symbol
A
B
C
d
D
D1
D2
E
F
P0
P1
T
W
W1
Dimension(mm)
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
55 Min
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
D
D2
D1
Direction of Feed
Version : A10