MMBT2222A Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN switching transistor

Small Signal Transistor
3 Collector
1 Base 2 Emitter
Features
—Epitaxial planar die construction
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case : SOT- 23 small outline plastic package
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Weight : 0.008gram (approximately)
—Marking Code : 1P
Ordering Information
Package
Part No.
SOT-23 MMBT2222A RF
SOT-23 MMBT2222A RFG
Packing
3K / 7" Reel
3K / 7" Reel
Marking
1P
1P
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
(Note 1)
Symbol
PD
V_CBO
V_CEO
V_EBO
IC
RθJA
TJ, TSTG
Notes:1. Valid provided that electrodes are kept at ambient temperature
MMBT2222A
300mW, NPN Small Signal Transistor
SOT-23
A
F
B
E
C
D
G
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min Max
2.80 3.00
1.20 1.40
0.30 0.50
1.80 2.00
2.25 2.55
0.90 1.20
0.550 REF
Unit (inch)
Min Max
0.110 0.118
0.047 0.055
0.012 0.020
0.071 0.079
0.089 0.100
0.035 0.043
0.022 REF
Suggested PAD Layout
0.95
0.037
0.9
0.035
0.8
0.031
2.0
0.079
Value
300
75
40
6
600
417
-55 to + 150
Units
mW
V
V
V
mA
°C/W
°C
Version : A10