MBRS10H100CT_11 Datasheet, PDF (2/2 Pages) Taiwan Semiconductor Company, Ltd – 10.0AMPS Surface Mount Schottky Barrier Rectifiers

RATINGS AND CHARACTERISTIC CURVES (MBRS10H100CT THRU MBRS10H200CT)
FIG.1 FORWARD CURRENT DERATING CURVE
12
10
8
6
4
2 ^{RESISTIVE OR}
INDUCTIVELOA
0
50 60 70 80 90 100 110 120 130 140 150 160 170 180
CASE TEMPERATURE (^oC)
FIG. 3 TYPICAL FORWARD CHARACTERISRICS
100
TA=125℃
10
1
0.1
0.6
TA=25℃
TA=25℃
PULSE WIDTH=300uS
1% DUTY CYCLE
0.7
0.8
0.9
1
1.1
1.2
1.3
FORWARD VOLTAGE (V)
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
180
8.3mS Single Half Sine Wave
150
JEDEC Method
120
90
60
30
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
10
TA=125℃
1
0.1
TA=75℃
0.01
0.001
TA=25℃
0.0001
0
20
40
60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
1000
900
800
700
600
500
400
300
200
100
0.1
1
10
100
REVERSE VOLTAGE (V)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
T-PULSE DURATION(s)
Version:E11