MBRS10H100CT_11 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 10.0AMPS Surface Mount Schottky Barrier Rectifiers

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MBRS10H100CT - MBRS10H200CT
10.0AMPS Surface Mount Schottky Barrier Rectifiers
D²PAK
Features
— UL Recognized File # E-326854
— Plastic material used carriers Underwriters
Laboratory Classification 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— High surge capability
— For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
— Guard-ring for overvoltage protection
— High temperature soldering guaranteed:
260℃/10 seconds/.25", (6.35mm) from case
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Case: D²PAK molded plastic body
— Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
— Polarity: As marked
— Mounting position:Any
— Mounting torque: 5 in. - lbs, max
— Weight: 1.41 grams
Dimensions in inches and (millimeters)
Marking Diagram
MBR10HXXCT = Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
MBRS
10H100CT
MBRS
10H150CT
MBRS
10H200CT
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T_C=133℃
V_RRM
100
150
200
V_RMS
70
105
140
V_DC
100
150
200
I_F(AV)
10
Peak Repetitive Surge Current (Rated V_R, Square
Wave, 20KHz) at Tc=133℃
I_FRM
10
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC Method)
I_FSM
120
Peak Repetitive Reverse Surge Current (Note 1)
I_RRM
1
0.5
Maximum Instantaneous Forward Voltage (Note 2)
IF=5A, T_A=25℃
IF=5A, T_A=125℃
IF=10A, T_A=25℃
IF=10A, T_A=125℃
Maximum Reverse Current @ Rated V_R
Voltage Rate of Change,(Rated V_R)
Typical Thermal Resistance
T_A=25 ℃
T_A=125 ℃
Operating Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
V_F
I_R
dV/dt
R_θjC
T_J
T_STG
0.85
0.75
0.95
0.85
0.88
0.75
0.97
0.85
5
1
10000
3.5
- 65 to + 175
- 65 to + 175
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Note 3: Chip Mounting (on case), where lead does not overlap heatsink with 0.11" offset.
Note 4: Chip Mounting (on case), where leads do overlap heatsink.
Note 5: Screw mounting with 4-40 screw, where washer diamerter is≦4.9mm (0.19")
Version:E11
Unit
V
V
V
A
A
A
A
V
uA
mA
V/us
O_C/W
O_C
O_C