B0530WS_1005 Datasheet, PDF (2/3 Pages) Taiwan Semiconductor Company, Ltd – 200mW, Low VF SMD Schottky Barrier Diode

Small Signal Diode
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
B0530WS
200mW, Low VF SMD Schottky Barrier Diode
Symbol
Min
IR= 500uA
V(BR)
30
IF= 100mA
IF= 500mA
-
VF
-
VR= 15V
VR= 20V
IR
-
VR= 30V
VR=0, f=1.0MHz
CJ
-
Max
-
0.36
0.47
80
100
500
58.0
Units
V
V
μA
pF
Tape & Reel specification
TSC label
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
d
T
P0
P1
A
C
B
E
F
W
W1
D
D2
D1
Item
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
Symbol
A
B
C
d
D
D1
D2
E
F
P0
P1
T
W
W1
Dimension(mm)
1.7 ± 0.10
3.73 ± 0.10
1.68 ±0.10
1.5 ± 0.1
178 ± 1
55 Min
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.23 ± 0.05
8.00 ±0.20
14.4 Max
Version : F10