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B0530WS_1005 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 200mW, Low VF SMD Schottky Barrier Diode | |||
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Small Signal Diode
B0530WS
200mW, Low VF SMD Schottky Barrier Diode
SOD-323F
B
Features
ÂFast switching device(Trr<4.0nS)
ÂSurface device type mounting
ÂMoisture sensitivity level 1
ÂMatte Tin(Sn) lead finish with Nickel(Ni) underplate
ÂPb free version and RoHS compliant
ÂGreen compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
A
D
E
F
Mechanical Data
ÂCase : Flat lead SOD-323 small outline plastic package
ÂTerminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
ÂHigh temperature soldering guaranteed: 260°C/10s
ÂPolarity : Indicated by cathode band
ÂWeight : 4.85±0.5 mg
ÂMarking Code : B3
Dimensions
A
B
C
D
E
F
Unit (mm)
Min Max
1.15 1.35
2.30 2.70
0.25 0.40
1.60 1.80
0.80 1.00
0.05 0.20
Unit (inch)
Min Max
0.045 0.053
0.091 0.106
0.010 0.016
0.063 0.071
0.031 0.039
0.002 0.008
Ordering Information
Pin Configuration
Package
Part No.
SOD-323F B0530WS RR
SOD-323F B0530WS RRG
Packing
3K / 7" Reel
3K / 7" Reel
Marking
B3
B3
Suggested PAD Layout
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward Surge Current
Pulse Width= 8.3 mS
( Singal Half -wave )
Thermal Resistance (Junction to Ambient) (Note )
Junction and Storage Temperature Range
Symbol
PD
VRRM
IO
IFSM
RθJA
TJ, TSTG
Notes:1. Valid provided that electrodes are kept at ambient temperature
1.60
0.063
2.86
0.113
0.63
0.025
0.83
0.033
Value
200
30
500
5.0
426
-65 to + 125
Units
mW
V
mA
A
°C/W
°C
Version :F10
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