1SS133M_15 Datasheet, PDF (2/4 Pages) Taiwan Semiconductor Company, Ltd – 300mW, Hermetically Sealed Glass Switching Diodes

Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(T_A=25°C unless otherwise noted)
Fig. 1 Forward Characteristics
100
10
T_A=125^oC
T_A=75^oC
1
T_A=25^oC
T_A=-25^oC
0.1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
Forward Voltage : V_F (V)
Fig. 3 Capacitance Between Terminals Characteristics
3.0
f = 1 MHz
2.5
2.0
1.5
1.0
0.5
0.0
0
5
10
15
20
25
30
Reverse Voltage : V_R (V)
Fig. 5 Surge Current Characteristics
100
1SS133M
Taiwan Semiconductor
10000
1000
100
10
Fig. 2 Reverse Characteristics
T_A=100^oC
T_A=75^oC
T_A=50^oC
T_A=25^oC
1
0
20
40
60
80
100
120
Reverse Voltage : V_R (V)
Fig. 4 Reverse Recovery Time Characteristics
5
V_R = 6 V
I_rr = 1/10 I_R
4
3
2
1
0
0
4
8
12
16
20
Forward Current : I_F (mA)
Fig. 6 Reverse Recovery Time ( trr )
Measurement Circuit
10
1
0.1
1
10
100
1000
10000
Pulse Width : Tw (ms)
Document Number: DS_S1403003
Version: C15