1SS133M_15 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 300mW, Hermetically Sealed Glass Switching Diodes

Small Signal Product
1SS133M
Taiwan Semiconductor
300mW, Hermetically Sealed Glass Switching Diodes
FEATURES
- Fast switching device (t_rr < 4.0 ns)
- Through-hole mount device type
- DO-34 package (JEDEC DO-204)
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion resistant
and leads are readily solderable
- RoHS compliant
- Solder hot dip Tin (Sn) lead finish
- Cathode indicated by polarity band
- Marking code: 133
DO-34
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
P_D
300
Working Inverse Voltage
W _IV
90
Average Rectified Current
I_O
150
Non-Repetitive Peak Forward Current
I_FM
450
Peak Forward Surge Current
I_FSURGE
2
Operating Junction Temperature
T_J
+ 175
Storage Temperature Range
T_STG
-65 to +200
UNIT
mW
V
mA
mA
A
o_C
o_C
PARAMETER
SYMBOL
Breakdown Voltage
I_R=500nA
B_V
Forward Voltage
I_F=100mA
V_F
Reverse Leakage Current
V_R=80V
I_R
Junction Capacitance
V_R=0, f=1.0MHz
C_j
Reverse Recovery Time
(Note 1)
t_rr
Notes: 1. Reverse Recovery Test Conditions: I_F=I_R=10mA, R_L=100Ω, I_RR=1mA
MIN
80
--
--
MAX
--
1.2
500
4.0
4.0
UNIT
V
V
nA
pF
ns
Document Number: DS_S1403003
Version: C15