TGA2624-CP_15 Datasheet, PDF (8/15 Pages) TriQuint Semiconductor – 9 to 10 GHz, 16 W GaN Power Amplifier

TGA2624-CP
9 to 10 GHz, 16 W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical.
46
44
42
40
38
36
34
32
30
8.5
PAE vs. Frequency vs. V_D
25 V
28 V
30 V
32 V
CW, P_IN = 15 dBm,
Temp = 25 °C
9.0
9.5
10.0
10.5
Frequency (GHz)
30
Power Gain vs. Frequency vs. V_D
CW, P_IN = 15 dBm,
Temp = 25 °C
29
28
27
25 V
26
28 V
30 V
25
32 V
24
8.5
9.0
9.5
10.0
10.5
Frequency (GHz)
PAE vs. Frequency vs. Temperature
46
CW, P_IN = 15 dBm
44
42
40
38
-40 °C
36
25 °C
85 °C
34
32
30
8.5
9.0
9.5
10.0
10.5
Frequency (GHz)
Power Gain vs. Frequency vs. Temperature
30
CW, P_IN = 15 dBm
29
28
27
-40 °C
26
25 °C
85 °C
25
24
8.5
9.0
9.5
10.0
10.5
Frequency (GHz)
PAE vs. Input Power vs. Temperature
46
44
42
40
38
36
-40 °C
25 °C
34
85 °C
32
CW, Freq = 9.5 GHz
30
0 2 4 6 8 10 12 14 16 18
P_IN (dBm)
Power Gain vs. Input Power vs. Temp.
42
39
36
33
30
-40 °C
25 °C
27
85 °C
24
CW, Freq = 9.5 GHz
21
0 2 4 6 8 10 12 14 16 18
P_IN (dBm)
Preliminary Datasheet: 11-03-14
© 2014 TriQuint
- 8 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com