TGA2624-CP_15 Datasheet, PDF (1/15 Pages) TriQuint Semiconductor – 9 to 10 GHz, 16 W GaN Power Amplifier

Applications
 Weather and Marine Radar
TGA2624-CP
9 to 10 GHz, 16 W GaN Power Amplifier
Product Features
Functional Block Diagram
 Frequency Range: 9 – 10 GHz
 Pout: 42 dBm (PIN = 15 dBm)
 PAE: > 37 % (PIN = 15 dBm)
 Power Gain: 27 dB (PIN = 15 dBm)
1
10
 Bias: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical
2
9
(Pulsed: PW = 100 µs, DC = 10%)
3
8
 Package Dimensions: 15.2 x 15.2 x 3.5 mm
4
7
 Package base is pure Cu offering superior thermal
5
6
management
General Description
TriQuint’s TGA2624-CP is a packaged high-power
X-Band amplifier fabricated on TriQuint’s TQGaN25 0.25
um GaN on SiC process. Operating from 9 to 10 GHz,
the TGA2624-CP achieves 42 dBm saturated output
power, a power-added efficiency of > 37 %, and power
gain of 27 dB.
The TGA2624-CP is packaged in a 10-lead 15x15 mm
bolt-down package with a Cu base for superior thermal
management. It can support a range of bias voltages
and performs well under both pulsed and CW conditions.
Both RF ports are internally DC blocked and matched to
50 ohms allowing for simple system integration.
The TGA2624-CP is ideally suited for both commercial
and defense applications.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Pin Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
GND
RFIN
VD
RFOUT
Ordering Information
Part
TGA2624-CP
ECCN Description
3A001.b.2.b
9 – 10 GHz, 16 W
GaN Power Amplifier
Preliminary Datasheet: 11-03-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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