TGA2623_15 Datasheet, PDF (8/14 Pages) TriQuint Semiconductor – 10 to 11GHz 35W GaN Power Amplifier

Typical Performance (CW Operation)
TGA2623
10 – 11GHz 35W GaN Power Amplifier
Output Power vs. Input Power vs. Freq.
47
45 ^{VD = 28V, IDQ = 290mA CW}
43
41
39
37
10.0GHz
10.5GHz
35
11.0GHz
Temp. = +25 C
33
0 2 4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
PAE vs. Input Power vs. Freq.
60
V_D = 28V, I_DQ = 290mA
Temp. = +25 C
50
40
30
10.0GHz
20
10.5GHz
11.0GHz
10
CW
0
0 2 4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
Output Power vs. Frequency
47
Temp. = +25 C
CW
45
43
41
39
37
35
10
Psat @ Pin=18dBm
P1dB
V_D = 28V, I_DQ = 290mA
10.2
10.4
10.6
10.8
11
Frequency (GHz)
Power Gain vs. Input Power vs. Freq.
38
CW V_D = 28V, I_DQ = 290mA
35
32
29
10.0GHz
26
10.5GHz
11.0GHz
23
Temp. = +25 C
20
0 2 4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
Drain Current vs. Input Power vs. Freq.
3500
V_D = 28V, I_DQ = 290mA CW
3000
2500
2000
1500
10.0GHz
10.5GHz
1000
11.0GHz
Temp. = +25 C
500
0 2 4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
Drain Current vs. Frequency vs. Temp.
3500
P_IN = 18dBm
CW
3000
2500
2000
1500
1000
500
9
+25C
+85C
V_D = 28V, I_DQ = 290mA
9.5
10 10.5 11 11.5 12
Frequency (GHz)
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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