TGA2623_15 Datasheet, PDF (1/14 Pages) TriQuint Semiconductor – 10 to 11GHz 35W GaN Power Amplifier

Applications
 X-band radar
TGA2623
10 – 11GHz 35W GaN Power Amplifier
Product Features
 Frequency Range: 10 – 11GHz
 PSAT: 45.5dBm @ PIN = 18dBm
 P1dB: 41dBm @ Midband
 PAE: >47% @ PIN = 18dBm
 Large Signal Gain: 27.5dB
 Small Signal Gain: 35dB
 Bias: VD = 28V, IDQ = 290mA, VG = -2.7V Typical
 Pulsed VD: PW = 100us and DC = 10%
 Chip Dimensions: 5.0 x 4.86 x 0.10 mm
Functional Block Diagram
2
3
45
1
6
10
9
87
General Description
TriQuint’s TGA2623 is an x-band, high power MMIC
amplifier fabricated on TriQuint’s production 0.25um GaN
on SiC process. The TGA2623 operates from 10 –
11GHz and provides a superior combination of power,
gain and efficiency. Achieving 35W of saturated output
power with 27.5dB of large signal gain and 47% power-
added efficiency, the TGA2623 provides the level of
performance demanded by today’s system architectures.
Depending on the system requirements, the TGA2623
can support cost saving initiatives on existing systems
while supporting next generation systems with increased
performance.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2, 10
4, 8
3, 9
5, 7
6
Symbol
RF In
VG1-2
VG3
VD1-2
VD3
RF Out
Ordering Information
Part
TGA2623
ECCN Description
3A001.b.2.b
10 – 11GHz 35W GaN
Power Amplifier
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com