TGF2023-10 Datasheet, PDF (7/7 Pages) TriQuint Semiconductor – 50 Watt Discrete Power GaN on SiC HEMT

TGF2023-10
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram.
• Force, time, and ultrasonics are critical bonding parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Ordering Information
Part
TGF2023-10
Package Style
GaN on SiC Die
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
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Dec 2008 © Rev A