TGF2023-10 Datasheet, PDF (1/7 Pages) TriQuint Semiconductor – 50 Watt Discrete Power GaN on SiC HEMT

TGF2023-10
50 Watt Discrete Power GaN on SiC HEMT
Key Features
• Frequency Range: DC - 18 GHz
• > 47 dBm Nominal Psat
• 55% Maximum PAE
• 15 dB Nominal Power Gain
• Bias: Vd = 28 - 40 V, Idq = 1 A, Vg = -3 V Typical
• Technology: 0.25 um Power GaN on SiC
• Chip Dimensions: 0.82 x 2.48 x 0.10 mm
Primary Applications
• Space
• Military
• Broadband Wireless
Measured Performance
Bias conditions: Vd = 28 - 40 V, Idq = 1 A, Vg = -3 V Typical
Product Description
The TriQuint TGF2023-10 is a discrete 10 mm
GaN on SiC HEMT which operates from DC-18
GHz. The TGF2023-10 is designed using
TriQuint’s proven 0.25um GaN production process.
This process features advanced field plate
techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
The TGF2023-10 typically provides > 47 dBm of
saturated output power with power gain of 15 dB.
The maximum power added efficiency is 55%
which makes the TGF2023-10 appropriate for high
efficiency applications.
Lead-free and RoHS compliant
.
Datasheet subject to change without notice.
1
TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [e-mail]
Dec 2008 © Rev A