T2G6003028-FS_15 Datasheet, PDF (7/13 Pages) TriQuint Semiconductor – 30W, 28V DC 6 GHz, GaN RF Power Transistor

T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Performance Over Temperature ^{(1, 2)}
Performance measured in TriQuint’s 3.0 GHz to 3.5 GHz Evaluation Board at 3 dB compression.
TBD
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 200 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%
Datasheet: Rev - 04-30-13
© 2013 TriQuint
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Disclaimer: Subject to change without notice
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