T2G6003028-FS_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 30W, 28V DC 6 GHz, GaN RF Power Transistor

T2G6003028-FS
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
• Frequency: DC to 6 GHz
• Output Power (P_3dB): 26 W at 5.6 GHz
• Linear Gain: >14 dB at 5.6 GHz
• Operating Voltage: 28 V
• Low thermal resistance package
Functional Block Diagram
1
2
General Description
The TriQuint T2G6003028-FS is a 30W (P_3dB) discrete
GaN on SiC HEMT which operates from DC to 6 GHz.
The device is constructed with TriQuint’s proven 0.25 µm
process, which features advanced field plate techniques
to optimize power and efficiency at high drain bias
operating conditions. This optimization can potentially
lower system costs in terms of fewer amplifier line-ups
and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1
2
Flange
Label
V_D / RF OUT
V_G / RF IN
Source
Ordering Information
Part
ECCN
T2G6003028-FS EAR99
T2G6003028-FS-
EVB1
EAR99
T2G6003028-FS-
EVB2
EAR99
Description
Packaged part
Flangeless
5.4 – 5.9 GHz
Evaluation Board
1.3 – 1.9 GHz
Evaluation Board
Datasheet: Rev - 04-30-13
© 2013 TriQuint
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Disclaimer: Subject to change without notice
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