T1G6001032-SM_15 Datasheet, PDF (6/13 Pages) TriQuint Semiconductor – 10W, 32V, DC 6 GHz, GaN RF Power Transistor

T1G6001032-SM
10W, 32V, DC – 6 GHz, GaN RF Power Transistor
Typical Performance
Performance is based on compromised impedance point and measured at DUT reference plane.
T1G6001032-SM Gain DrEff. and PAE vs. Pout
1000MHz, 100 us 20%, Vds = 32V, Idq = 50 mA
28
80
27
70
26
60
25
Z_S = 14.40 + j24.68 Ω
50
Z_L = 47.75 + j23.10 Ω
24
40
23
30
22
Gain
20
DrEff.
21
PAE
10
2029 _{30 31 32 33 34 35 36 37 38 39 40 410}
Pout [dBm]
T1G6001032-SM Gain DrEff. and PAE vs. Pout
3000MHz, 100 us 20%, Vds = 32V, Idq = 50 mA
20
80
19
70
18
60
17
Z_S = 3.20 - j0.93 Ω
50
Z_L = 21.88 + j14.97 Ω
16
40
15
30
14
Gain
20
DrEff.
13
PAE
10
1229 _{30 31 32 33 34 35 36 37 38 39 40 410}
Pout [dBm]
T1G6001032-SM Gain DrEff. and PAE vs. Pout
5000MHz, 100 us 20%, Vds = 32V, Idq = 50 mA
17
80
16
70
15
Z_S = 4.03 - j11.99 Ω
60
14
Z_L = 13.29 + j2.56 Ω
50
13
40
12
30
11
Gain
DrEff.
20
10
PAE
10
929 _{30 31 32 33 34 35 36 37 38 39 40 410}
Pout [dBm]
T1G6001032-SM Gain DrEff. and PAE vs. Pout
2000MHz, 100 us 20%, Vds = 32V, Idq = 50 mA
24
80
23
70
22
60
21
Z_S = 4.55 + j8.13 Ω
50
20
Z_L = 28.19 + j16.74 Ω
40
19
30
18
Gain
20
DrEff.
17
PAE
10
1629 _{30 31 32 33 34 35 36 37 38 39 40 410}
Pout [dBm]
T1G6001032-SM Gain DrEff. and PAE vs. Pout
4000MHz, 100 us 20%, Vds = 32V, Idq = 50 mA
19
80
18
70
17
60
Z_S = 3.66 - j7.68 Ω
16
Z_L = 14.36 + j4.96 Ω
50
15
40
14
30
13
Gain
20
DrEff.
12
PAE
10
1129 _{30 31 32 33 34 35 36 37 38 39 40 410}
Pout [dBm]
T1G6001032-SM Gain DrEff. and PAE vs. Pout
6000MHz, 100 us 20%, Vds = 32V, Idq = 50 mA
16
80
15
70
14
60
Z_S = 5.33 - j23.06 Ω
13
Z_L = 8.17 - j8.90 Ω
50
12
40
11
30
10
Gain
DrEff.
20
9
PAE
10
829 _{30 31 32 33 34 35 36 37 38 39 40 410}
Pout [dBm]
Datasheet: Rev A 05-24-13
© 2013 TriQuint
- 6 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com