T1G6001032-SM_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 10W, 32V, DC 6 GHz, GaN RF Power Transistor

T1G6001032-SM
10W, 32V, DC – 6 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
• Frequency: DC to 6 GHz
• Output Power (P_3dB): 10 W Peak at 3.1 GHz
• Linear Gain: >17 dB at 3.1 GHz
• Operating Voltage: 32 V
• Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T1G6001032-SM is a 10 W (P_3dB) discrete
GaN on SiC HEMT which operates from DC to 6 GHz.
The device is constructed with TriQuint’s proven
TQGaN25 process, which features advanced field plate
techniques to optimize power and efficiency at high drain
bias operating conditions. This optimization can
potentially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
18, 19, 20, 21, 22, 23
2, 3, 4, 5, 6, 7
33
1, 8, 9, 10, 11, 12, 13,
14, 15, 16, 17, 24, 25,
26, 27, 28, 29, 30, 31,
32
Label
V_D / RF OUT
V_G / RF IN
Source
Not Connected
Ordering Information
Part
ECCN
T1G6001032-SM EAR99
T1G6001032-SM-
EVB1
EAR99
Description
Packaged part
Surface Mount
2.7-3.1 GHz
Evaluation Board
Datasheet: Rev A 05-24-13
© 2013 TriQuint
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Disclaimer: Subject to change without notice
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