TGF4250 Datasheet, PDF (5/7 Pages) TriQuint Semiconductor – 4.8 mm Discrete HFET

TGF4250-EEU
RF AND DC
CHARACTERISTICS
LINEAR MODEL
Pout
GP
PAE
IDSS
GM
VP
BVGS
BVGD
PARAMETER
Output Power
Power Gain
Power Added Efficiency
Drain Saturation Current
Transconductance
Pinch Off Voltage
Breakdown Voltage Gate-Source
Breakdown Voltage Gate-Drain
MIN
NOMINAL
M AX
UNIT
33
34
-
dBm
7
8.5
-
dB
47
53
-
%
816
1176
1536 mA
576
792
1008 mS
-2.7
-1.85
-1
V
- 30
- 22
- 17
V
- 30
- 22
- 17
V
Pout, Gain, and P AE: Measured at 8.5- GHz, drain voltage of 8.0 V . Gate voltage is adjusted to achieve
quiescent current of approximately 20% I _DSS with no RF signal applied. The source is grounded. Input power
between 25 and 26- dBm.
I_DSS: Saturated drain- source current. Sear ch for the maximum I_DS at V_GS = 0.0 V, and V_DS swept between 0.5 V
to 3.5 V. Note that the drain voltage at which I_DSS is located and r ecorded as V_DSP.
G_M: Transconductance. (I_DSS - I_DS1)/ I V_G1 I. I_DS1 measured at V_G1 = - 0.25 V using the knee sear ch technique;
V_DS swept between 0.5 V and V_DSP to search for maximum I_DS1.
V_P: Pinch off voltage. V_GS for I_DS = 0.5 mA/mm of gate width. V_DS fixed at 2.0 V, V_GS swept to bring I_DS to
0.5 mA/mm. Sweep will stop if V_P current not found beyond 0.5 V of the minimum V_P specification.
BV_GS: Breakdown voltage, gate to source. I_BD = 1.0 mA/mm of gate width. Source fixed at ground, drain not
connected (floating). When 1.0mA/mm drawn at gate, V_GS measured as BV_GS.
BV_GD: Breakdown voltage, gate to drain. I_BD = 1.0 mA/mm of gate width. Drain fixed at ground, source not
connected (floating). When 1.0 mA/mm drawn at the gate, V_GD measured as BV_GD.
C_DG
R_DG
L_G
R_G
G
R_I
R_GS
C_GS
V_CCS
R₁
R₂
R_S
L_S
R_D
L_D
D
C_DS
R_DS
V_DS = 8.0 V and 30% I_DSS at T = 25°C
FET Elements
L_G = 0.010525 nH
R_G = 0.21075
R_GS = 20425
R_I = 0.3025
C_GS = 4.84 pF
C_DG = 0.4015 pF
R_DG = 51000
R_S = 0.1
L_S = 0.011 nH
R_DS = 24.5025
C_DS = 1.013 pF
R_D = 0.165
L_D = 0.0055 nH
VCCS Parameters
M = 531.6 mS
A=0
R1 = 1E19
R2 = 1E19
F=0
T = 5.49 pS
5
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