TGF4250 Datasheet, PDF (1/7 Pages) TriQuint Semiconductor – 4.8 mm Discrete HFET

T R I Q U I N T S E M I C ON D U C TO R, I N C.
TGF4250-EEU
4250 ^{4.8 mm Discrete HFET}
q ^{4800 µm x 0.5 µm HFET}
q ^{Nominal Pout of 34- dBm at 8.5- GHz}
q ^{Nominal Gain of 8.5- dB at 8.5- GHz}
q ^{Nominal PAE of 53% at 8.5 - GHz}
q ^{Suitable for high reliability applications}
q ^{0,572 x 1,334 x 0,102 mm (0.023 x 0.053 x 0.004 in.)}
PHOTO ENLARGEMENT
DESCRIPTION
The TriQuint TGF4250-EEU is a single gate 4.8 mm discrete GaAs Heterostructure Field
Ef fect Transistor (HFET) designed for high ef ficiency power applications up to 10. 5- GHz in Class A and
Class AB operation. Typical performance at 2- GHz is 34 - dBm power output, 13 - dB gain, and 63% PAE.
Bond pad and backside metalization is gold plated for compat ibility with eutectic alloy attach
methods as well as thermocompr ession and thermosonic wire-bonding processes. The TGF4250-EEU
is readily assembled using automatic equipment.
TriQuint Semiconductor, Inc. • Texas Facilities • [phone] • www.triquint.com