CLY5_15 Datasheet, PDF (5/9 Pages) TriQuint Semiconductor – High Power GaAs

CLY5
High Power GaAs FET
Performance Plots
Test conditions unless otherwise noted: ID=350 mA (typ.), Freq.=1800 MHz, Temp=+25°C
P1dB & PAE vs. Drain-Source Voltage
35
30
P1dB
25
20
PAE
15
10
5
0
1
2
3
4
5
6
7
Drain-Source Voltage (V)
70
60
50
40
30
20
10
0
8
P1dB & Gain vs. Drain-Source Voltage
2.0
20
1.6
16
Gain
1.2
12
0.8
8
P1dB
0.4
4
0.0
0
1
2
3
4
5
6
7
8
Drain-Source Voltage (V)
I-V Characteristics
1.2
Temp.=+25°C
1.0
0.8
VG0
VGp5
VG1
VG1p5
VG2
Ptot
1.2
1.0
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0.0
0
1
2
3
4
5
Drain-Source Voltage (V)
0.0
6
Datasheet: Rev G 08-29-14
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